Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Advanced Physical Modeling of SiOx Resistive Random Access Memories

We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self-heating effects a...

Conductance Quantization in Resistive Random Access Memory.

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optic...

Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles

It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for nonvolatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. T...

Quantum Conductance in Silicon Oxide Resistive Memory Devices

Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which constrain the motion of electrons, leading to the quantisation of device conductance into multiples of...

Light-activated resistance switching in SiOx RRAM devices